| 发明名称 |
FINFET AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A FinFET includes a fin structure, a gate and a source-drain region. The fin structure is over a substrate and has a recess of an upper surface of the fin structure and a doped region in the fin structure and adjacent to the recess. The gate protrudes from the recess and across over the fin structure. The source-drain region is in the fin structure and adjacent to the doped region. Methods for forming the FinFET are also provided. |
| 申请公布号 |
US2016149040(A1) |
申请公布日期 |
2016.05.26 |
| 申请号 |
US201514819602 |
申请日期 |
2015.08.06 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE Wei-Yang;CHEN Ting-Yeh;CHAN Chia-Ling;CHAN Chien-Tai |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A FinFET, comprising:
a fin structure over a substrate and having a first recess of an upper surface of the fin structure and a doped region in the fin structure and adjacent to the first recess, wherein the doped region is through the fin structure; a gate protruding from the first recess and across over the fin structure; and a source-drain region in the fin structure and adjacent to the doped region. |
| 地址 |
Hsinchu TW |
