| 发明名称 |
GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME |
| 摘要 |
A method of processing a gallium nitride substrate, includes providing a gallium nitride substrate, polishing a surface of the gallium nitride substrate, and cleaning the polished surface of the gallium nitride substrate. The polished surface includes a GaLα/CKα peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum which is not less than 2, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. |
| 申请公布号 |
US2016148817(A1) |
申请公布日期 |
2016.05.26 |
| 申请号 |
US201615012459 |
申请日期 |
2016.02.01 |
| 申请人 |
SCIOCS Company Limited |
发明人 |
YAMAMOTO Shunsuke |
| 分类号 |
H01L21/306;H01L21/02;H01L21/66;G01N23/225;H01L33/00;H01L29/20;H01S5/02;C01B21/06;H01S5/323 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of processing a gallium nitride substrate, comprising:
providing a gallium nitride substrate; polishing a surface of the gallium nitride substrate; and cleaning the polished surface of the gallium nitride substrate, wherein the polished surface includes a GaLα/CKα peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum which is not less than 2, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. |
| 地址 |
Hitachi-shi JP |
