发明名称 |
半導体装置 |
摘要 |
An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor. |
申请公布号 |
JP5926411(B2) |
申请公布日期 |
2016.05.25 |
申请号 |
JP20150003279 |
申请日期 |
2015.01.09 |
申请人 |
株式会社半導体エネルギー研究所 |
发明人 |
山崎 舜平;坂田 淳一郎;三宅 博之;桑原 秀明;魚地 秀貴 |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/336;H01L21/477;H01L51/50;H05B33/14;H05B33/28 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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