| 发明名称 |
Vertical Semiconductor Device and Method for Manufacturing Therefor |
| 摘要 |
A vertical semiconductor device includes a semiconductor body having a front side, a backside arranged opposite to the front side and a lateral edge delimiting the semiconductor body in a horizontal direction perpendicular to the front side, a gate metallization arranged on the front side and extending at least close to the lateral edge; a contact metallization arranged on the front side and between the lateral edge and the gate metallization, and a backside metallization arranged on the backside and in electric contact with the contact metallization. The gate metallization is arranged around at least two sides of the contact metallization when viewed from above. |
| 申请公布号 |
US2016141376(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201514935180 |
申请日期 |
2015.11.06 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Rothmaler Rudolf |
| 分类号 |
H01L29/40;H01L21/765;H01L27/088;H01L21/768;H01L23/528;H01L27/082 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A vertical semiconductor transistor, comprising:
a semiconductor body having a front side, a backside arranged opposite to the front side and a lateral edge delimiting the semiconductor body in a horizontal direction perpendicular to the front side; a gate metallization arranged on the front side and extending at least close to the lateral edge; a contact metallization arranged on the front side and between the lateral edge and the gate metallization, wherein the gate metallization is arranged around at least two sides of the contact metallization when viewed from above; and a backside metallization arranged on the backside and in electric contact with the contact metallization. |
| 地址 |
Villach AT |
