发明名称 |
SILICON NITRIDE WEAR RESISTANT MEMBER AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED COMPACT |
摘要 |
The present invention provides a silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. Due to above structure, there can be provided a wear resistant member comprising the silicon nitride sintered compact having an excellent wear resistance and processability. |
申请公布号 |
US2016137556(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
US201414896775 |
申请日期 |
2014.06.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA ;TOSHIBA MATERIALS CO., LTD. |
发明人 |
YAMAGUTI Haruhiko |
分类号 |
C04B35/593;F16C33/32 |
主分类号 |
C04B35/593 |
代理机构 |
|
代理人 |
|
主权项 |
1. A silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide,
wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. |
地址 |
Tokyo JP |