发明名称 SILICON NITRIDE WEAR RESISTANT MEMBER AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED COMPACT
摘要 The present invention provides a silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. Due to above structure, there can be provided a wear resistant member comprising the silicon nitride sintered compact having an excellent wear resistance and processability.
申请公布号 US2016137556(A1) 申请公布日期 2016.05.19
申请号 US201414896775 申请日期 2014.06.11
申请人 KABUSHIKI KAISHA TOSHIBA ;TOSHIBA MATERIALS CO., LTD. 发明人 YAMAGUTI Haruhiko
分类号 C04B35/593;F16C33/32 主分类号 C04B35/593
代理机构 代理人
主权项 1. A silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less.
地址 Tokyo JP
您可能感兴趣的专利