Flowable silicon—carbon—oxygen layers for semiconductor processing

摘要

Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.

主权项

1. A method of forming a silicon-carbon-oxygen layer on a patterned substrate, the method comprising:
transferring the patterned substrate into a substrate processing region of a substrate processing chamber; flowing an oxygen-containing precursor into a remote plasma region while igniting a remote plasma to form a radical oxygen precursor; flowing a silicon-and-carbon-containing precursor into a substrate processing region without first passing the silicon-and-carbon-containing precursor through a plasma, wherein the silicon-and-carbon-containing precursor has two distinct silicon atoms separated by at least one carbon atom; flowing the radical oxygen precursor into the substrate processing region; combining the silicon-and-carbon-containing precursor and the radical oxygen precursor in the substrate processing region to form a silicon-carbon-oxygen layer on the patterned substrate, wherein the silicon-carbon-oxygen layer is flowable during formation; and curing the silicon-carbon-oxygen layer, wherein the formed silicon-carbon-oxygen layer comprises an atomic percentage of carbon content greater than 5%, and wherein the cured silicon-carbon-oxygen layer is characterized by a wet etch rate ratio (WERR) of less than 0.5 compared to thermal silicon oxide in a dilute HF solution.