发明名称 Method and device for continuously coating substrates
摘要 The invention relates to a method for the continuous coating of at least one substrate 14 with a semiconductor material e.g. CdTe. To this end a semiconductor material is sublimated in at least one crucible 30 in order to deposit it on a substrate, e.g. a glass panel. If the crucible 30 is filled with semiconductor material (16) during the deposition and/or evaporation, the set-up time required otherwise is then eliminated. Preferably used for carrying out the method is a CSS reactor comprising a crucible, a guide for substrates and at least one lock through which the crucible can be refilled during evaporation of semiconductor material from the crucible.
申请公布号 US9343305(B2) 申请公布日期 2016.05.17
申请号 US201113993410 申请日期 2011.10.28
申请人 ANTEC SOLAR GMBH 发明人 Kreft Norbert;Oelting Stefan
分类号 H01L21/20;H01L21/02;C23C14/24;C23C14/56;H01L31/18 主分类号 H01L21/20
代理机构 Norton Rose Fulbright US LLP 代理人 Norton Rose Fulbright US LLP
主权项 1. Method for continuous coating of at least one substrate comprising at least the steps of: evaporating a semiconductor material in a crucible at a first temperature; and depositing the semiconductor material on the at least one substrate,characterized in thatthe crucible is filled with semiconductor material during the depositing, the evaporating, or both the depositing and the evaporating; andthe semiconductor material is preheated such that, as it enters the crucible, the semiconductor material is at a second temperature that is within 20% of the first temperature.
地址 Arnstadt DE