| 摘要 |
Disclosed are a substrate for nitride semiconductor growth including a phosphor, a manufacturing method thereof, and a nitride semiconductor light emitting device using the same. According to the present invention, the nitride semiconductor light emitting device comprises: a growth substrate having first and second surfaces; and a light emitting structure composed of an epitaxially-grown multilayered nitride semiconductor on the first surface of the growth substrate and configured to emit light with a first wavelength. The growth substrate includes a phosphor therein, excited by the light with the first wavelength and configured to generate light with a second wavelength. According to the present invention, white light is able to be implemented in an element level, not a package level, by using the growth substrate including the phosphor therein. |
