发明名称 SEMICONDUCTOR STRUCTURES FOR ASSEMBLY IN MULTI-LAYER SEMICONDUCTOR DEVICES INCLUDING AT LEAST ONE SEMICONDUCTOR STRUCTURE
摘要 A multi-layer semiconductor device includes at least a first semiconductor structure and a second semiconductor structure, each having first and second opposing surfaces. The second semiconductor structure includes a first section and a second section, the second section including a device layer and an insulating layer. The second semiconductor structure also includes one or more conductive structures and one or more interconnect pads. Select ones of the interconnect pads are electrically coupled to select ones of the conductive structures. The multi-layer semiconductor device additionally includes one or more interconnect structures disposed between and coupled to select portions of second surfaces of each of the first and second semiconductor structures. A corresponding method for fabricating a multi-layer semiconductor device is also provided.
申请公布号 WO2016073049(A1) 申请公布日期 2016.05.12
申请号 WO2015US44679 申请日期 2015.08.11
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 DAS, RABINDRA, N.;YOST, DONNA-RUTH, W.;CHEN, CHENSON;WARNER, KEITH;VITALE, STEVEN, A.;GOUKER, MARK, A.;KEAST, CRAIG, L.
分类号 H01L23/538;H01L25/00 主分类号 H01L23/538
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