| 发明名称 |
FABRICATING METAL SOURCE-DRAIN STRESSOR IN A MOS DEVICE CHANNEL |
| 摘要 |
Exemplary embodiments provide methods and systems for fabricating a metal source-drain stressor in a MOS device channel having improved tensile stress. Aspects of exemplary embodiment include forming a recess in source and drain areas; forming a metal contact layer on surfaces of the recess that achieves low contact resistivity; forming a metallic diffusion barrier over the metal contact layer; forming a layer M as an intimate mixture of materials A and B that substantially fills the recess; capping the layer M with a capping layer so that layer M is fully encapsulated and the capping layer prevents diffusion of A and B; and forming a compound AxBy within the layer M via a thermal reaction resulting in a reacted layer M comprising the metal source-drain stressor. |
| 申请公布号 |
US2016133745(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201514934045 |
申请日期 |
2015.11.05 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kittl Jorge A.;Hegde Ganesh;Rodder Mark S. |
| 分类号 |
H01L29/78;H01L21/768 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating metal source-drain stressor in a MOS device channel, comprising:
forming a recess in source and drain areas; forming a metal contact layer on surfaces of the recess that achieves low contact resistivity; forming a metallic diffusion barrier over the metal contact layer; forming a layer M as an intimate mixture of materials A and B that substantially fills the recess; capping the layer M with a capping layer so that layer M is fully encapsulated and the capping layer prevents diffusion of A and B; and forming a compound AxBy within the layer M via a thermal reaction resulting in a reacted layer M comprising the metal source-drain stressor. |
| 地址 |
Gyeonggi-do KR |
