DRAM MIMCAP Stack with MoO2 Electrode

摘要

Steps are taken to ensure that the bulk dielectric layer exhibits a crystalline phase before the deposition of a second electrode layer. The crystalline phase of the bulk dielectric layer facilitates the crystallization of the second electrode layer at lower temperature during a subsequent anneal treatment. In some embodiments, one or more interface layers are inserted between the bulk dielectric layer and the first electrode layer and/or the second electrode layer. The interface layers may act as an oxygen sink, facilitate the crystallization of the electrode layer at lower temperature during a subsequent anneal treatment, or provide barriers to leakage current through the film stack.

主权项

1. A capacitor stack comprising:
a first electrode layer formed above a surface of a substrate; a first interface dielectric layer formed above the first electrode layer; a bulk dielectric layer formed above the first interface layer; a second interface layer formed above the bulk dielectric layer,
wherein the second interface layer is a multilayered stack comprising a first layer and a second layer,wherein the first layer of the multilayered stack comprises a first oxide different from a material of the bulk dielectric layer,wherein the second layer of the multilayered stack comprises a second oxide different from the first oxide and different from the material of the bulk dielectric layer; and a second electrode formed above the second interface layer such that the second interface layer is disposed between the bulk dielectric layer and the second electrode,
wherein the second electrode comprises molybdenum oxide.