发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technique enabling fillability of an encapsulation member to be improved.SOLUTION: A power semiconductor device comprises an insulation substrate 1, a semiconductor element 2, a case 4, and a wiring member 5. The case 4 forms a container body having a bottom face that is a surface bonded with the semiconductor element 2, of the insulation substrate 1. The wiring member 5 has a junction part located above an upper surface electrode 2a of the semiconductor element 2. At the junction part of the wiring member 5, a projection 5b protruding to the upper surface electrode 2a side of the semiconductor element 2 and bonded with the upper surface electrode 2a by solder 6, and a through-hole 5c penetrating through the junction part in a thickness direction via the projection 5b, are provided.SELECTED DRAWING: Figure 3
申请公布号 JP2016076670(A) 申请公布日期 2016.05.12
申请号 JP20140207761 申请日期 2014.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 ASADA SHINSUKE;YOSHIMATSU NAOKI;IMOTO YUJI;ISHIYAMA YUSUKE;FUJINO JUNJI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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