| 摘要 |
A low-temperature polycrystalline silicon thin-film transistor GOA circuit, for use in reverse scan transmission, comprising multiple cascade GOA units, where a level N GOA unit comprises: a transmission part (100), a transmission control part (200), a data storage part (300), a data removal part (400), an output control part (500), and an output buffer part (600). Employment of a transmission gate for transmission of a signal between upper/lower levels, employment of a NOR gate logic unit and a NAND gate for conversion of the signal, and employment of a timing inverter and an inverter for storage and transmission of the signal solve the problem of poor component circuit stability and large power consumption of a low-temperature polycrystalline silicon single-type thin-film transistor and the problem of thin-film transistor electric leakage of a single-type GOA circuit, thus optimizing circuit performance. |
