发明名称 BIAS-BOOSTING CIRCUIT WITH DUAL CURRENT MIRRORS FOR RF POWER AMPLIFIER
摘要 An RF power amplifier circuit has a signal input and a signal output. An input matching network connected to the signal input, and an output matching network is connected to the signal output. There is a power amplifier with an input connected to the input matching network, and an output connected to the output matching network. A bias boosting circuit is connected to the input of the power amplifier, and the bias boosting circuit comprises a cascode current mirror that is defined by a first cascode circuit and a second cascode circuit, and a biasing transistor that is connected to an output of the cascode current mirror. The biasing transistor, together with the power amplifier, defines a current mirror. The bias boosting circuit is thus a dual current mirror circuit that boosts the bias of the power amplifier.
申请公布号 WO2016073784(A1) 申请公布日期 2016.05.12
申请号 WO2015US59330 申请日期 2015.11.05
申请人 MORFIS SEMICONDUCTOR, INC. 发明人 LUO, SIFEN;CHEN, CHANGLI
分类号 H03F1/02;H03F1/30;H03F3/19 主分类号 H03F1/02
代理机构 代理人
主权项
地址