Semiconductor device, related manufacturing method, and related electronic device

摘要

A method for manufacturing a semiconductor device may include the following steps: providing a composite structure that includes a gate material layer, a first mask material layer, and a sacrificial layer; partially removing, through a first mask, the sacrificial layer to form a sacrificial members; providing a second mask material layer on the sacrificial members; partially removing the second mask material layer to form mask units that contact sides of the sacrificial members; removing the sacrificial members; providing a third mask material layer between two of the mask units for forming a second mask; partially removing, through the second mask, the first mask material layer to form a third mask; and partially removing, through the third mask, the gate material layer to form a control gate and a select gate.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
providing a composite structure that includes a floating gate material layer, a control gate material layer overlapping the floating gate material layer, a first mask material layer overlapping the control gate material layer, and a sacrificial layer overlapping the first mask material layer; providing a first mask on the composite structure, wherein the first mask includes a first mask member and a second mask member; partially removing, through the first mask, the sacrificial layer to form a first sacrificial member and a second sacrificial member, wherein the first sacrificial member corresponds to the first mask member, and wherein the second sacrificial member corresponds to the second mask member; providing a second mask material layer on the first sacrificial member and the second sacrificial member; partially removing the second mask material layer to form a first mask unit, a second mask unit, and a third mask unit, wherein the first mask unit corresponds to a side of the first sacrificial member, wherein the second mask unit corresponds to a first side of the second sacrificial member, and wherein the third mask unit corresponds to a second side of the second sacrificial member; removing the first sacrificial member and the second sacrificial member; providing a third mask material layer between the second mask unit and the third mask unit to form a second mask that includes the third mask material layer, the first mask unit, the second mask unit, and the third mask unit; partially removing, through the second mask, the first mask material layer to form a third mask, wherein the third mask includes a first mask element and a second mask element, wherein the first mask element corresponds to the first mask unit, and wherein the second mask element corresponds to a combination of the third mask material layer, the second mask unit, and the third mask unit; and partially removing, through the third mask, the control gate material layer and the floating gate material layer to form a control gate of the semiconductor device and a select gate of the semiconductor device, wherein the control gate corresponds to the first mask element, and wherein the select gate corresponds to the second mask element.