| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a transistor, lead frames, a metal spacer, one surface of which is bonded to the transistor by a first bonding material and the other surface of which is bonded to the lead frame by a second bonding material, and a plastic mold. The plastic mold packages the transistor and the metal spacer. One surface of each of the lead frames is attached to the plastic mold. Strength of the second bonding material is lower than strength of the first bonding material. According to the above configuration, when stress is repeatedly applied to the semiconductor device, a crack occurs earlier in the second bonding material than in the first bonding material. The stress is buffered at the first bonding material. | ||
| 申请公布号 | US9337113(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201214437507 | 申请日期 | 2012.11.20 |
| 申请人 | TOYOTA JIDOSHA KABUSHIKI KAISHA | 发明人 | Asai Rintaro;Tanida Atsushi |
| 分类号 | H01L23/02;H01L23/52;H01L21/48;H01L23/10;H01L23/00;H01L23/051;H01L23/433;H01L23/495;H01L23/48;H01L21/52;H01L23/31 | 主分类号 | H01L23/02 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A semiconductor device comprising: a semiconductor element; a lead frame; a metal spacer provided between the semiconductor element and the lead frame; and a plastic mold packaging the semiconductor element and the metal spacer, and attached to one surface of the lead frame, wherein the metal spacer and the semiconductor element are bonded by a first bonding material, and the metal spacer and the lead frame are bonded by a second bonding material, and strength of the second bonding material is lower than strength of the first bonding material. | ||
| 地址 | Toyota JP | ||