Semiconductor device and manufacturing method thereof

摘要

Provided are a semiconductor device including an oscillator and a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a main surface; a wiring structure including a plurality of layers of metal wirings arranged over the main surface of the semiconductor substrate; a conducting film over an uppermost metal wiring formed so as to cover the upper surface of the uppermost metal wiring that is the uppermost layer of the metal wirings of the wiring structure; a metal resistive element formed by the same layer as the conducting film over the uppermost metal wiring; and an anti-reflection insulating film to be sandwiched between the uppermost metal wiring and the conducting film over the uppermost metal wiring, wherein the metal resistive element is arranged at a position lower than that of the conducting film over the uppermost metal wiring.