发明名称 DIFFUSION FURNACE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a diffusion furnace capable of reducing occurrence of deviation or disturbance in a gas flow in a tube.SOLUTION: A diffusion furnace comprises: a tube including a first opening for carrying in a semiconductor wafer; a plurality of injectors provided facing the first opening and introducing a first gas into the tube; a mass flow controller controlling a flow rate of the first gas introduced by the plurality of injectors; an end lid for lidding the first opening; a plurality of exhaust pipes provided in the end lid and exhausting a gas containing the first gas in the tube to the outside of the tube; an exhaust fan controlling a flow rate of the gas containing the first gas exhausted from the plurality of exhaust pipes; and a heater provided in an outer periphery of the tube and heating the inside of the tube or keeping it warm.SELECTED DRAWING: Figure 1
申请公布号 JP2016072292(A) 申请公布日期 2016.05.09
申请号 JP20140196915 申请日期 2014.09.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAWASAKI NAOSHIGE
分类号 H01L21/31;C23C16/455;H01L21/22;H01L21/324 主分类号 H01L21/31
代理机构 代理人
主权项
地址