发明名称 |
DIFFUSION FURNACE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a diffusion furnace capable of reducing occurrence of deviation or disturbance in a gas flow in a tube.SOLUTION: A diffusion furnace comprises: a tube including a first opening for carrying in a semiconductor wafer; a plurality of injectors provided facing the first opening and introducing a first gas into the tube; a mass flow controller controlling a flow rate of the first gas introduced by the plurality of injectors; an end lid for lidding the first opening; a plurality of exhaust pipes provided in the end lid and exhausting a gas containing the first gas in the tube to the outside of the tube; an exhaust fan controlling a flow rate of the gas containing the first gas exhausted from the plurality of exhaust pipes; and a heater provided in an outer periphery of the tube and heating the inside of the tube or keeping it warm.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016072292(A) |
申请公布日期 |
2016.05.09 |
申请号 |
JP20140196915 |
申请日期 |
2014.09.26 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KAWASAKI NAOSHIGE |
分类号 |
H01L21/31;C23C16/455;H01L21/22;H01L21/324 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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