发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus, which can increase an amount of chemical in a liquid film of a chemical held on a substrate top face thereby to achieve a favorable chemical treatment on the substrate top face.SOLUTION: A substrate processing method performed in a substrate processing apparatus 1 comprises: a liquid film formation process of supplying a chemical to a top face of a substrate W to form a liquid film 29 of the chemical on the top face of the substrate; and an air current formation process of forming an air current 28 flowing toward a peripheral part 29A of the liquid film 29 of the chemical. The air current 28 formed in the air current formation process is an upward air current flowing upward in a vertical direction in a ring-shaped region 27 lateral to the substrate W. By this air current 28, the chemical contained in the peripheral part 29A of the liquid film 29 of the chemical is pushed toward a top face central part of the substrate W by the air current 28.SELECTED DRAWING: Figure 4
申请公布号 JP2016072387(A) 申请公布日期 2016.05.09
申请号 JP20140199033 申请日期 2014.09.29
申请人 SCREEN HOLDINGS CO LTD 发明人 HATANO AKITO
分类号 H01L21/304 主分类号 H01L21/304
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