发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING A LEAKAGE CURRENT SENSING UNIT AND METHOD OF OPERATING THE SAME
摘要 A semiconductor integrated circuit device and a system including the same, configured for sensing a pure leakage current of a cell array and improving a read error is disclosed. The system a controller and a memory configured to interface with the controller. The memory includes a semiconductor integrated circuit device includes a leakage current sensing unit configured to sense a pure leakage current of a cell array according to a command of the controller; and a determination circuit unit configured to compare a voltage level of an input node with a reference voltage and determine a state of read data while in a read mode. The voltage level of the input node is decided by comparing an output current and a read current and the output current is decided by summing the pure leakage current and a reference current.
申请公布号 US2016125940(A1) 申请公布日期 2016.05.05
申请号 US201514932760 申请日期 2015.11.04
申请人 SK hynix Inc. 发明人 KANG Seok Joon
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A semiconductor integrated circuit device comprising: a cell array including a plurality of word lines, a plurality of bit lines crossing the plurality of word lines, and a plurality of memory cells located at interconnections of the word lines and the bit lines, wherein each memory cell includes an OTS (ovonic threshold switch) and a calcogenide material; a mode setting unit configured to set a leakage current sensing mode by applying a first voltage to the cell array, and sets a read mode by applying a second voltage to the cell array; a reference current generation unit configured to provide a reference current to an output node while in the read mode; a leakage current generation unit including a capacitor loop, and configured to generate a leakage current according to a charge amount stored in the capacitor loop and transfer the leakage current to the output node while in the leakage current sensing mode; a leakage current compensation unit configured to reflect a ratio of a voltage in the read mode to a component of the first voltage to the leakage current applied to the output node while in the read mode; and a determination circuit unit configured to compare a voltage corresponding to a comparison result between a current of the cell array and a current of the output node with a reference voltage and determine a set state or a reset state of the cell array.
地址 Icheon-si Gyeonggi-do KR