发明名称 ORGANIC SEMICONDUCTOR DOPING PROCESS
摘要 The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidised salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidised salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described.
申请公布号 US2016126020(A1) 申请公布日期 2016.05.05
申请号 US201414894187 申请日期 2014.05.30
申请人 ISIS INNOVATION LIMITED 发明人 SNAITH Henry;LEIJTENS Tomas;ABATE Antonio;SELLINGER Alan
分类号 H01G9/20;H01L51/00;H01G9/00 主分类号 H01G9/20
代理机构 代理人
主权项 1. A process for producing a p-doped organic semiconductor comprising treating an organic semiconductor other than polyaniline with a protic ionic liquid.
地址 Summertown, Oxfordshire GB