SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF

摘要

In a semiconductor laser, a block layer is provided on both sides of a mesa-type semiconductor part having an n-type cladding layer, an active layer, and a p-type cladding layer. The block layer has: a p-type block layer formed on the side surface of the mesa-type semiconductor part and over a p-type semiconductor substrate; a high-resistance layer formed over the p-type block layer; and an n-type block layer formed over the high-resistance layer, which has a higher resistance than that of the p-type block layer. By providing the high-resistance layer between the p-type block layer and the n-type block layer, the thickness of the p-type block layer can be controlled and a leakage current (flow of a hole) can be reduced. Further, the distance between the n-type cladding layer and the n-type block layer can be secured, and hence a leakage current (flow of an electron) can be prevented.

主权项

1. A semiconductor laser comprising:
a p-type semiconductor substrate; a convex part provided over the semiconductor substrate; a block layer provided on both sides of the convex part; wherein the convex part has: a p-type compound semiconductor layer formed over the semiconductor substrate; an active layer formed over the p-type compound semiconductor layer; and an n-type compound semiconductor layer formed over the active layer, and wherein the block layer has: a p-type block layer including a p-type compound semiconductor formed over a side surface of the convex part and over the semiconductor substrate; a first resistive layer formed over the p-type block layer; and an n-type block layer including an n-type compound semiconductor formed over the first resistive layer, and wherein the first resistive layer has a resistance larger than that of the p-type block layer.