ZnO based semiconductor device and its manufacture method

摘要

A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn-Si-O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.