发明名称 |
NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING SAME |
摘要 |
A variable resistance nonvolatile storage element (10) includes: a first electrode (106); a second electrode (104); and a variable resistance layer (115) having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer (115x), a second transition metal oxide layer (115y), and a third transition metal oxide layer (115z) in this order, the first transition metal oxide layer having a composition expressed as MO x (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MO y (where x > y), and the third transition metal oxide layer having a composition expressed as MO z (where y > z). |
申请公布号 |
EP2626902(B1) |
申请公布日期 |
2016.05.04 |
申请号 |
EP20110830388 |
申请日期 |
2011.10.06 |
申请人 |
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. |
发明人 |
MIKAWA, TAKUMI;HAYAKAWA, YUKIO;NINOMIYA, TAKEKI;KAWASHIMA, YOSHIO;YONEDA, SHINICHI |
分类号 |
H01L45/00;H01L27/10 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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