| 摘要 |
The present invention relates to a method of manufacturing a semiconductor light emitting device. The method of manufacturing a semiconductor light emitting device comprises the steps of: providing a first dam having an opening on a first base; as a step of disposing a semiconductor light emitting unit on the first base exposed by the opening, disposing the semiconductor light emitting unit on the first base such that a first encapsulant faces the first base and at least one electrode faces upwardly, the semiconductor light emitting unit including a plurality of semiconductor layers having a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first and second semiconductor layers and generating light by the recombination of electrons and holes, the at least one electrode supplying current to the plurality of semiconductor layers, and the first encapsulant covering the plurality of semiconductor layers on an opposite side of the at least one electrode; forming a second encapsulant between the first dam and the semiconductor light emitting unit; and forming at least one conductive unit to cover the at least one electrode upwardly exposed and a portion of the second encapsulant. Thus, a semiconductor light emitting device and/or a light emitting device package formed in an almost chip scale may be provided. |
