Pixel structure

摘要

A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.

主权项

1. A pixel structure, disposed on a substrate, comprising:
a channel layer, disposed on the substrate; a source electrode and a drain electrode, disposed on the channel layer, wherein the source electrode and the drain electrode are separated from each other; a pixel electrode, disposed on the substrate and electrically connected to the drain electrode, wherein the channel layer and the pixel electrode comprise a semiconductor material layer, and an oxygen content of the pixel electrode is less than an oxygen content of the channel layer, and wherein the pixel electrode comprises a conductor portion and a semiconductor portion; a first insulation layer, covering the channel layer, wherein the first insulation layer covers the source electrode and the drain electrode and exposes at least one partial region of the pixel electrode; a gate electrode, disposed on the first insulation layer located above the channel layer; and a second insulation layer, covering the gate electrode and the first insulation layer, wherein the second insulation layer has a pixel opening, and the pixel opening exposes the at least one partial region of the pixel electrode, and exposes the conductor portion of the pixel electrode, and wherein the first insulation layer the second insulation layer cover the semiconductor portion of the pixel electrode.