Semiconductor arrangement and formation thereof

摘要

One or more techniques for forming a semiconductor arrangement and resulting structures formed thereby are provided herein. The semiconductor arrangement includes a power divider comprising a transmission line and a resistor, where the transmission line is over and connected to an active area input, a first active area output and a second active area output. The semiconductor arrangement has a smaller chip size than a semiconductor arrangement where the transmission line is not over the active area input, the first active area output and the second active area output. The smaller chip size is due to the active area input, the first active area output and the second active area output being formed closer to one another than would be possible in a semiconductor arrangement where the transmission line is formed between at least one of the active area input, the first active area output or the second active area output.

主权项

1. A semiconductor arrangement comprising:
a first active area output in a substrate adjacent an active area input; a second active area output in the substrate adjacent the first active area output; and a power divider comprising a transmission line and a resistor, the transmission line over the active area input, the first active area output and the second active area output, the transmission line connected to the active area input, the first active area output and the second active area output.