发明名称 |
IC EMI filter with ESD protection incorporating LC resonance tanks for rejection enhancement |
摘要 |
An integrated circuit (IC) electromagnetic interference (EMI) filter with electrostatic discharge (ESD) protection incorporating inductor-capacitor (LC) resonance tanks is disclosed. The filter comprises at least one circuit composed of a diode and an inductor connected in series, wherein the diode induces a parasitic capacitance and the circuit is grounded. When a number of the circuit is two, a passive element is coupled between the two inductors and cooperates with them to induce two parasitic capacitances connected with the circuits. When a number of the circuit is one, two diodes respectively connect with the inductor through two passive elements. Each diode can induce a parasitic capacitance. The two passive elements and the inductor can induce a parasitic capacitance connected with the circuit. |
申请公布号 |
US9331661(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201414486167 |
申请日期 |
2014.09.15 |
申请人 |
Silergy Semiconductor Technology (Hangzhou) LTD |
发明人 |
Wang Albert Z.;Wu Wenchin;Wang Shijun;Zhang Nan |
分类号 |
H01C7/12;H03H7/01;H02H9/04;H01L23/552;H03H1/00 |
主分类号 |
H01C7/12 |
代理机构 |
|
代理人 |
Stephens, Jr. Michael C. |
主权项 |
1. An integrated circuit (IC) electromagnetic interference (EMI) filter with electrostatic discharge (ESD) protection incorporating inductor-capacitor (LC) resonance tanks, said IC EMI filter comprising:
a first diode with a first anode thereof coupled to a ground, wherein said first diode comprises a first parasitic capacitance between a first cathode of said first diode and said first anode; a first inductor having a first series resistance, and being coupled to said first cathode; a second diode with a second anode thereof coupled to said ground, wherein said second diode comprises a second parasitic capacitance between a second cathode of said second diode and said second anode; a second inductor having a second series resistance, and being coupled to said second cathode; and a first passive element coupled between said first and second inductors, wherein a first node between said first passive element and said first inductor is coupled to a first port, and a second node between said first passive element and said second inductor is coupled to a second port. |
地址 |
Hangzhou CN |