发明名称 |
SOC design with critical technology pitch alignment |
摘要 |
An SOC apparatus includes a plurality of gate interconnects with a minimum pitch g, a plurality of metal interconnects with a minimum pitch m, and a plurality of vias interconnecting the gate interconnects and the metal interconnects. The vias have a minimum pitch v. The values m, g, and v are such that g2+m2≧v2 and an LCM of g and m is less than 20 g. The SOC apparatus may further include a second plurality of metal interconnects with a minimum pitch of m2, where m2>m and the LCM of g, m, and m2 is less than 20 g. |
申请公布号 |
US9331016(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201414338229 |
申请日期 |
2014.07.22 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Chen Xiangdong;Kwon Ohsang;Terzioglu Esin;Bunnalim Hadi |
分类号 |
H01L29/40;H01L23/522;H01L27/02;H01L23/528 |
主分类号 |
H01L29/40 |
代理机构 |
Arent Fox LLP |
代理人 |
Arent Fox LLP |
主权项 |
1. A system on a chip (SOC) apparatus, comprising:
a plurality of gate interconnects with a minimum pitch g; a plurality of metal interconnects with a minimum pitch m; and a plurality of vias formed in a single patterning process for a manufacturing technology less than or equal to 20 nm and interconnecting the gate interconnects and the metal interconnects, the vias having a minimum pitch v, wherein g2+m2≧v2, wherein the minimum pitch v is greater than the minimum pitch g and the minimum pitch m used in the apparatus and a least common multiplier (LCM) of g and m is less than 20 g, wherein the parameters g and m are in nm. |
地址 |
San Diego CA US |