Methods of forming semiconductor devices

摘要

Methods of forming a semiconductor device are provided. The methods may include forming a second insulation pattern on a first insulation pattern. The first insulation pattern may cover a plurality of conductive structures, and may include a hole therein. The second insulation pattern may include a trench therein that is connected with the hole. The methods may also include forming a spacer on sidewalls of the hole and the trench. The methods may further include forming a wiring structure in the hole and the trench.

主权项

1. A method of forming a semiconductor device, comprising:
forming a plurality of conductive structures on a substrate; forming a first insulation layer on the plurality of conductive structures, the first insulation layer extending in both a first direction that is parallel to a bottom surface of the substrate and a second direction that is parallel to the bottom surface of the substrate and that is perpendicular to the first direction; patterning the first insulation layer to form a first insulation pattern that includes a hole that extends through the first insulation pattern in a third direction that is perpendicular to both the first direction and the second direction, the hole exposing the substrate; forming a sacrificial pattern in the hole, the sacrificial pattern comprising a spin-on hard mask layer including carbon (C); forming a second insulation pattern on the first insulation pattern and on the sacrificial pattern, the second insulation pattern including a trench therein that extends in the first direction and that extends through the second insulation pattern in the third direction to expose a surface of the sacrificial pattern; and then removing the sacrificial pattern from the first insulation pattern; forming a spacer on sidewalls of the hole and the trench; and forming a wiring structure between opposing sidewalls of the spacer in the hole and the trench, wherein a width of the trench in the second direction is equal to a width of the hole in the second direction.