| 摘要 |
An ion implantation device equipped with a vacuum chamber (11), an electrode roll (13) on a portion of the outer circumferential part of which a film (2) is wound, a voltage application means (21) that applies a voltage to the electrode roll, and a gas introduction means (31) that introduces a gas into the vacuum chamber, wherein a voltage is applied to the electrode roll by means of the voltage application means and a gas is introduced by means of the gas introduction means, and an ion implantation process is performed on the surface of the film. In addition, electrode members (42) are provided opposing the surface of the electrode roll on which the film is wound. |
| 主权项 |
1. An ion implantation apparatus comprises:
a vacuum chamber, a roller electrode having a portion of an outer circumferential part on which a film is wound, voltage application means for applying a voltage to the roller electrode, and gas introduction means for supplying a gas into the vacuum chamber, in operation, voltage being applied to the roller electrode by the voltage application means, and the gas being supplied into the chamber through the gas introduction means, to thereby form a plasma, whereby a surface of the film is subjected to an ion implantation treatment, wherein an electrode member is disposed so as to be opposite the portion of the roller electrode on which the film is wound, and the electrode member is composed of a plurality of plate members, and the plate members are arranged along a circumferential direction of the roller electrode, with respective members being separated from one another. |
