| 摘要 |
PROBLEM TO BE SOLVED: To form a super-junction structure while inhibiting generation voids.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: a process of preparing a silicon carbide substrate having a first principal surface and a second principal surface located on the side opposite to the first principal surface; a process of forming on the first principal surface, an epitaxial layer which has a first conductivity type and has a third principal surface located on the side opposite to the side where the silicon carbide substrate lies; a process of forming in the epitaxial layer, a groove including side walls crossing the third principal surface and a bottom continuing to the side walls; a process of widening an opening of the groove; and a process of forming in the groove, an embedded region which has a second conductivity type different from the first conductivity type. The epitaxial layer adjacent to the embedded region and the embedded region form a super-junction structure. The silicon carbide semiconductor device manufacturing method further comprises: a process of forming on the embedded region, an impurity region having the second conductivity type; a process of forming a first electrode on the impurity region; and a process of forming a second electrode which contacts the second principal surface.SELECTED DRAWING: Figure 1 |
