Method for forming semiconductor structure with metallic layer over source/drain structure

摘要

A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a source/drain structure over a substrate and forming a metal layer on the source/drain structure. The method for manufacturing a semiconductor structure further includes reacting a portion of the metal layer with the source/drain structure to form a metallic layer on the source/drain structure. The method for manufacturing a semiconductor structure further includes removing an unreacted portion of the metal layer on the metallic layer by an etching process. In addition, the etching process includes using an etchant including HF and propylene carbonate, and the volume ratio of HF to propylene carbonate in the etchant is in a range from about 1:10 to about 1:10000.

主权项

1. A method for manufacturing a semiconductor structure, comprising:
forming a source/drain structure over a substrate; forming a metal layer on the source/drain structure; reacting a portion of the metal layer with the source/drain structure to form a metallic layer on the source/drain structure; and removing an unreacted portion of the metal layer on the metallic layer by an etching process; wherein the etching process comprises using an etchant comprising HF and propylene carbonate, and a volume ratio of HF to propylene carbonate in the etchant is in a range from about 1:10 to about 1:10000.