发明名称 |
Process for fabricating a circuit substrate |
摘要 |
A process for fabricating a circuit substrate is provided. The process includes the following steps. A carrier is provided. A conductive layer and a dielectric layer are placed on the carrier, and the conductive layer is located between the carrier and the dielectric layer. The dielectric layer is patterned to form a patterned-dielectric layer having first openings partially exposing the conductive layer. Arc-shaped grooves are formed on the exposed part of the conductive layer. A first-patterned-photoresist layer having second openings respectively connecting the first openings is formed. Conductive structures are formed, wherein each of the conductive structures is integrally formed and includes a pad part, a connection part, and a protruding part; the second openings, the first openings and the arc-shaped grooves are respectively filled with the pad parts, the connection parts and the protruding parts. The first patterned photoresist layer, the carrier and the conductive layer are removed. |
申请公布号 |
US9324580(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201514789998 |
申请日期 |
2015.07.02 |
申请人 |
VIA Technologies, Inc. |
发明人 |
Kung Chen-Yueh;Chang Wen-Yuan |
分类号 |
H01L21/56;H01L21/48;H01L23/48;H01L21/32;H01L21/683;H01L23/00;H01L23/498;H05K1/11;H05K3/24;H05K3/40;H05K3/42;H05K3/46 |
主分类号 |
H01L21/56 |
代理机构 |
Jianq Chyun IP Office |
代理人 |
Jianq Chyun IP Office |
主权项 |
1. A process for fabricating a circuit substrate, the process comprising:
providing a carrier; placing a conductive layer and a dielectric layer on the carrier, the conductive layer being located between the carrier and the dielectric layer; patterning the dielectric layer to form a patterned dielectric layer, the patterned dielectric layer having a plurality of first openings respectively exposing a portion of the conductive layer; forming a plurality of arc-shaped grooves on the conductive layer with use of the patterned dielectric layer as a mask; forming a first patterned photoresist layer, wherein the first patterned photoresist layer has a plurality of second openings respectively connecting the first openings; forming a plurality of conductive structures with use of the first patterned photoresist layer as a mask, wherein each of the conductive structures is integrally formed and comprises a pad part, a connection part, and a protruding part, the second openings are respectively filled with the pad parts, the first openings are respectively filled with the connection parts, and the arc-shaped grooves are respectively filled with the protruding parts; removing the first patterned photoresist layer and the carrier; and removing the conductive layer to expose the protruding parts. |
地址 |
New Taipei TW |