发明名称 Process for fabricating a circuit substrate
摘要 A process for fabricating a circuit substrate is provided. The process includes the following steps. A carrier is provided. A conductive layer and a dielectric layer are placed on the carrier, and the conductive layer is located between the carrier and the dielectric layer. The dielectric layer is patterned to form a patterned-dielectric layer having first openings partially exposing the conductive layer. Arc-shaped grooves are formed on the exposed part of the conductive layer. A first-patterned-photoresist layer having second openings respectively connecting the first openings is formed. Conductive structures are formed, wherein each of the conductive structures is integrally formed and includes a pad part, a connection part, and a protruding part; the second openings, the first openings and the arc-shaped grooves are respectively filled with the pad parts, the connection parts and the protruding parts. The first patterned photoresist layer, the carrier and the conductive layer are removed.
申请公布号 US9324580(B2) 申请公布日期 2016.04.26
申请号 US201514789998 申请日期 2015.07.02
申请人 VIA Technologies, Inc. 发明人 Kung Chen-Yueh;Chang Wen-Yuan
分类号 H01L21/56;H01L21/48;H01L23/48;H01L21/32;H01L21/683;H01L23/00;H01L23/498;H05K1/11;H05K3/24;H05K3/40;H05K3/42;H05K3/46 主分类号 H01L21/56
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A process for fabricating a circuit substrate, the process comprising: providing a carrier; placing a conductive layer and a dielectric layer on the carrier, the conductive layer being located between the carrier and the dielectric layer; patterning the dielectric layer to form a patterned dielectric layer, the patterned dielectric layer having a plurality of first openings respectively exposing a portion of the conductive layer; forming a plurality of arc-shaped grooves on the conductive layer with use of the patterned dielectric layer as a mask; forming a first patterned photoresist layer, wherein the first patterned photoresist layer has a plurality of second openings respectively connecting the first openings; forming a plurality of conductive structures with use of the first patterned photoresist layer as a mask, wherein each of the conductive structures is integrally formed and comprises a pad part, a connection part, and a protruding part, the second openings are respectively filled with the pad parts, the first openings are respectively filled with the connection parts, and the arc-shaped grooves are respectively filled with the protruding parts; removing the first patterned photoresist layer and the carrier; and removing the conductive layer to expose the protruding parts.
地址 New Taipei TW