| 摘要 |
SOLUTION: A resist composition is provided, which comprises: a polymer containing a repeating unit that has a carboxyl group unsubstituted or substituted with an acid-labile group and/or a hydroxy group unsubstituted or substituted with an acid-labile group excluding an α-trifluoromethyl hydroxy group; a compound that has a hydrophilic group selected from a hydroxy group, lactone ring, lactam ring, sultone ring, sulfone group, sulfonate group, sulfonamide group, carboxylic acid amide group, nitro group, cyano group, thienyl group, furyl group, pyrrole group, and acid anhydride group and that also has an oxirane ring or an oxetane ring; and an acid generator.EFFECT: According to the present invention, a photoresist composition showing a high dissolution contrast and high sensitivity in organic solvent development can be provided; and such a pattern forming method can be provided that a hole pattern or a trench pattern can be formed through a positive-negative reversal process by development with an organic solvent.SELECTED DRAWING: Figure 1 |
