| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an on-resistance.SOLUTION: A semiconductor device according to an embodiment comprises: a plurality of first semiconductor layers of a first conductivity type provided in a vertical direction on a base layer and each having a first end surface; and a plurality of second semiconductor layers of a second conductivity type provided alternately with the first semiconductor layers in a direction vertical to the base layer and each having a second end surface located between the adjacent first semiconductor layers. In addition, the semiconductor device comprises: a first electrode opposed to the first end surfaces via an insulating film; a second electrode contacted with lateral faces of the first semiconductor layers, and the second end surfaces; a first semiconductor region of the second conductivity type located between the second electrode and the first and second semiconductor layers, and opposed to the first electrode via the insulating film; and a second semiconductor region of the first conductivity type provided in the first semiconductor region located between the second electrode and the first semiconductor layers, opposed to the first electrode via the insulating film, and electrically connected with the second electrode.SELECTED DRAWING: Figure 1 |
