METHOD FOR FORMING NITRIDE SEMICONDUCTOR DEVICE

摘要

A method for producing a nitride semiconductor device is disclosed. The method includes steps of: forming a channel layer, an InAlN doped layer sequentially on the substrate, raising a temperature of the substrate as supplying a gas source containing In, and/or another gas source containing Al, and growing GaN layer on the InAlN doped. Or, the method grows the channel layer, the InAlN layer, and another GaN layer sequentially on the substrate, raising the temperature of the substrate, and growing the GaN layer. These methods suppress the sublimation of InN from the InAlN layer.

主权项

1. A method for forming a semiconductor device, comprising steps of:
growing a channel layer epitaxially on a substrate, the channel layer being made of nitride semiconductor material; growing an InAlN layer epitaxially on the channel layer at a first temperature; raising a temperature of the substrate from the first temperature to a second temperature as supplying gas sources containing indium (In) and aluminum (Al); and growing a GaN layer epitaxially on the InAlN layer at the second temperature.