| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a point light source light emitting diode in which a light quantity emitted sideways is small. <P>SOLUTION: In the point light source LED10 which includes a light emitting portion 14, wherein a plurality of semiconductor thin-film layers 20 including a light emitting layer are laminated on a semiconductor substrate 18, and the light generated at the light emitting layer of the light emitting portion 14 is output from a light takeoff portion 26 limited to a part of an upper face 12 of an element, a light shielding wall 16 being confronted with a side face of the light emitting portion 14, having the same height as the light emitting portion 14, and having the same lamination structure as the light emitting portion 14 is formed on the upper face 12 of the element. With such constitution, even if the light is output from the side face of the light emitting portion 14, as a part or all of the light is reflected or absorbed by the light shielding wall 16, the light quantity emitted sideways becomes smaller. Moreover, if the light shielding wall 16 is formed at the same time in an etching process to form the light emitting portion 14, only the same number of processes as such case where the light shielding wall 16 is not provided is needed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
