Semiconductor Devices Including Channel Regions with Varying Widths

摘要

A semiconductor device includes a semiconductor substrate, a fin-type structure on the semiconductor substrate, and a gate on a portion of a top surface and portions of two side surfaces of the fin-type structure. The gate has a first width at a first level from the top surface of the substrate and a second width at a second level from the top surface of the substrate that is lower than the first level. The first width is greater than the second width, and a width of the gate is reduced from the first width to the second width between the first level and the second level.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having an upper surface; a fin-type structure on the semiconductor substrate, the fin-type structure having a top surface opposite the substrate and two opposing side surfaces; and a gate on a portion of the top surface and portions of the two side surfaces of the fin-type structure; wherein the gate has a first width at a first level from the upper surface of the substrate and a second width at a second level from the upper surface of the substrate, wherein the second level is lower than the first level, wherein the first width is greater than the second width, and wherein a width of the gate is reduced from the first width to the second width between the first level and the second level.