| 发明名称 |
LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL |
| 摘要 |
Transistors including one or more semiconductor fins formed on a substrate. The one or more semiconductor fins are thinner in a channel region than in source and drain regions and have rounded corners formed by an anneal in a gaseous environment. A gate dielectric layer is on the channel region of the one or more semiconductor fins, conforming to the contours of the one or more semiconductor fins. A gate structure is on the gate dielectric layer. |
| 申请公布号 |
US2016111553(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514974763 |
申请日期 |
2015.12.18 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;RENESAS ELECTRONICS CORPORATION |
发明人 |
BASKER VEERARAGHAVAN S.;MOCHIZUKI SHOGO;YAMASHITA TENKO;YEH CHUN-CHEN |
| 分类号 |
H01L29/786;H01L29/417;H01L29/06;H01L29/423 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor, comprising:
one or more semiconductor fins formed on a substrate, wherein the one or more semiconductor fins are thinner in a channel region than in source and drain regions and have rounded corners formed by an anneal in a gaseous environment; a gate dielectric layer on the channel region of the one or more semiconductor fins, conforming to the contours of the one or more semiconductor fins; and a gate structure on the gate dielectric layer. |
| 地址 |
Armonk NY US |
