Electrically Controllable Integrated Switch

摘要

Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

主权项

1. A method of forming an integrated circuit chip with a switching device disposed in a metallization, the method comprising:
providing a semiconductor substrate; forming back-end-of-line metallization over the substrate, the back-end-of-line metallization including a plurality of levels of metal, each level of metal extending in a plane parallel to and spaced from an upper surface of the substrate; and forming the switching device within a cavity in the back-end-of-line metallization, the switching device comprising a beam held by a structure at a pivot point and a contact region extending into the cavity and adjacent the beam, the beam, the structure and the contact region being formed from the same level of metal.