SiC SINGLE CRYSTAL PRODUCTION METHOD AND SiC SINGLE CRYSTAL PRODUCTION DEVICE

摘要

Provided is an SiC single crystal production method allowing a temperature variation to be reduced in an Si-C solution even when a crystal growth is being carried out over a long time period. The SiC single crystal production method according to this embodiment comprises: a preparation step for preparing a production device (100) equipped with a crucible (7) in which raw materials for the Si-C solution are contained, a seed shaft (41) that has a seed crystal (9) attached to the lower extremity thereof, and an internal lid (60) capable of being positioned inside the crucible (7)and having a through-hole (60A) in the center, wherethrough the seed shaft (41) passes; a generation step for heating the raw materials inside the crucible (7) to generate the Si-C solution (8); a growth step for bringing the seed crystal (9) into contact with the Si-C solution (8) so as to produce the SiC single crystal over the seed crystal (9); and an internal lid adjustment step for displacing during the growth step one of the internal lid (60) and the crucible (7) relative to one another in the height direction whereby the range of the variation in the distance between the internal lid (60) and the Si-C solution (8) in the height direction is adjusted to be within a first reference range.