Semiconductor Film with Adhesion Layer and Method for Forming the Same

摘要

Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide including a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material including the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds.

主权项

1. A device, comprising:
an insulator layer disposed over a substrate; an adhesion layer over the insulator layer and comprising a semiconductor oxide, the semiconductor oxide comprising a compound of a semiconductor element and oxygen; and a semiconductor film layer over the adhesion layer, the semiconductor film layer being a material comprising the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer; wherein bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds.