| 发明名称 |
ETCH STOP LAYER IN INTEGRATED CIRCUITS |
| 摘要 |
An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer. |
| 申请公布号 |
US2016111325(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514689929 |
申请日期 |
2015.04.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
JangJian Shiu-Ko;Hong Tsung-Hsuan;Lin Chun Che;Wu Chih-Nan |
| 分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit structure comprising:
a first dielectric layer; and an etch stop layer comprising:
a first sub layer comprising a metal nitride over the first dielectric layer; anda second sub layer overlying or underlying the first sub layer, wherein the second sub layer comprises a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer. |
| 地址 |
Hsin-Chu TW |
