| 发明名称 |
SEMICONDUCTOR-LASER-DEVICE ASSEMBLY |
| 摘要 |
A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly. |
| 申请公布号 |
US2016111857(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514933664 |
申请日期 |
2015.11.05 |
| 申请人 |
Sony Corporation |
发明人 |
KONO Shunsuke;KURAMOTO Masaru;KODA Rintaro |
| 分类号 |
H01S5/065;H01S3/23 |
主分类号 |
H01S5/065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor-laser-device assembly comprising:
a semiconductor laser element, a dispersion compensation optical system configured to receive laser light emitted from the semiconductor laser element, and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, wherein the semiconductor optical amplifier is configured to receive a portion of the laser light incident on the dispersion compensation optical system and to amplify the laser light, wherein the dispersion compensation optical system includes a diffraction grating. |
| 地址 |
Tokyo JP |
