| 摘要 |
<p>780,207. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Dec. 22, 1954 [Dec. 24, 1953], No. 37113/54. Class 37. A method of making a semi-conductor device comprising an envelope 1 through which a metal tube 2 has been sealed, housing a semiconductor body 10, e.g. Ge, and a co-operating electrode 9 or electrodes, comprises securing a metal support 6, 5 for the body 10 or one 9 of the electrodes in the tube by deforming the outer end of the tube to grip the support and form a partial seal therewith and then sealing it to the support. In the crystal diode shown in Fig. 1, the envelope is of glass and both tubes 2 of Fe-Ni-Co alloy are deformed by spinning them over at 13 into grooves 12 in the respective supports 5, 6, the seal being completed by solder or synthetic, e.g. ethoxyline resin, applied to the outside of the end of each tube. In a modification, Fig. 2 (not shown), the tube through which the support on which the Ge bead is soldered passes, is spun over a bulge on the support before the sealing. The support to which the cooperating electrode is welded is then sealed through a sealed-in metal tube in the normal way, influx of vapour generated by the sealing being prevented by the pressure generated within the envelope by the heating.</p> |
