| 发明名称 | Light emitting devices, systems, and methods of manufacturing | ||
| 摘要 | A light emitting device includes: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector. | ||
| 申请公布号 | US9318657(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201414481928 | 申请日期 | 2014.09.10 |
| 申请人 | XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. | 发明人 | Chen Wenxin;Zhong Zhibai;Leung Charles Siu Huen |
| 分类号 | H01L33/24;H01L33/00;H01L33/58;H01L33/10;H01L33/62;H01L33/20;H01L33/40;H01L33/64 | 主分类号 | H01L33/24 |
| 代理机构 | Syncoda LLC | 代理人 | Syncoda LLC ;Ma Feng;Feng Junjie |
| 主权项 | 1. A light emitting device comprising: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector; the light emitting device further comprising: a p-type semiconductor overlying layer between the p layer and the reflector,wherein the plurality of microchannels are disposed in the p-type semiconductor overlying layer and are configured to reduce self-absorption to thereby increase light emission efficiency of the light emitting device; the light emitting device further comprising: a submount disposed over the reflector, wherein the submount includes a plurality of conductive channels;a contact layer; anda conductive layer. | ||
| 地址 | Xiamen CN | ||