Recessed termination structures and methods of fabricating electronic devices including recessed termination structures

摘要

An electronic device includes a drift region, a Schottky contact on a surface of the drift region, and an edge termination structure in the drift region adjacent the Schottky contact. The edge termination structure includes a recessed region that is recessed from the surface of the drift region by a distance d that may be about 0.5 microns.

主权项

1. An electronic device, comprising:
a drift region; a Schottky contact on a surface of the drift region; an edge termination in the drift region adjacent the Schottky contact, wherein the edge termination comprises a recessed region that is recessed from the surface of the drift region by a distance d and an edge termination structure in the recessed region; and an upper guard ring at the surface of the drift region beneath the Schottky contact and a plurality of lower guard rings at a surface of the recessed region, and wherein the upper guard ring and the plurality of lower guard rings have a second conductivity type that is opposite a first conductivity type of the drift region, wherein the lower guard rings comprise rings of the second conductivity type that are electrically isolated from one another and that surround an active region defined by the Schottky contact.