INTERCONNECT STRUCTURE AND METHOD FOR FORMING INTERCONNECT STRUCTURE

摘要

Disclosed are an improved interconnect structure for achieving a lower Rc, and a method for forming the interconnect structure. To lower the Rc of the interconnect structure, an α phase induction metal is introduced on a first Ta barrier layer of β phase. The post deposition of Ta on it is induced by the formation of the α phase Ta barrier layer. The Rc of the post-deposited Ta barrier layer having a first crystalline structure of α phase is lower than that of the β phase Ta barrier layer.