发明名称 |
SILVER PASTE, SEMICONDUCTOR DEVICE USING THE SAME AND METHOD FOR PRODUCING SILVER PASTE |
摘要 |
PROBLEM TO BE SOLVED: To provide a silver paste that can form a silver sintered body having high denseness even when sintered at a low temperature and at a low pressure (or under non-pressure), exhibits sufficient bond strength even when bonded to a metal other than silver and can be sintered and bonded even in an oxygen-free atmosphere, to provide a semiconductor device using the silver paste and to provide a method for producing the silver paste.SOLUTION: The silver paste contains a silver particle and a solvent. The silver particle includes (A) a spherical silver particle having a particle size of 1 to 300 nm which is coated with a specific protective agent, (B) a monocrystal silver particle having a particle size of 10 nm to 7 μm which is coated with a specific protective agent and (C) a nonspherical silver particle having a particle size of 500 nm to 20 μm which is coated with a specific protective agent.SELECTED DRAWING: Figure 9 |
申请公布号 |
JP2016054098(A) |
申请公布日期 |
2016.04.14 |
申请号 |
JP20140180143 |
申请日期 |
2014.09.04 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
ISHIKAWA MASARU;KAWANA YUKI;SUGAMA CHIE;MATSUMOTO HIROSHI;TAKAHASHI HIROYUKI;NISHIMURA MASATO;NATORI MICHIKO;NAKAKO TAKEO;KURABUCHI KAZUHIKO |
分类号 |
H01B1/22;C09J9/02;C09J201/00;H01B1/00;H01B13/00;H01L21/52 |
主分类号 |
H01B1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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